A research team at Fudan University in Shanghai has developed a groundbreaking nonvolatile flash memory, “PoX,” capable of programming a single bit in 400 picoseconds, achieving around 25 billion operations per second. This innovation, led by Prof. Zhou Peng, utilizes two-dimensional Dirac graphene for its ballistic charge transport, potentially eliminating the need for separate high-speed SRAM caches and addressing memory bottlenecks in AI hardware. While the team is working on scaling the architecture and array-level demonstrations, endurance figures and fabrication yields remain undisclosed, with results published in the journal Nature.
